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January 1999
NDH8321C Dual N & P-Channel Enhancement Mode Field Effect Transistor
General Description
These dual N- and P -Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
Features
N-Ch 3.8 A, 20 V, RDS(ON)=0.035 @ VGS= 4.5 V RDS(ON)=0.045 @ VGS=2.7 V P-Ch -2.7 A, -20V, RDS(ON)=0.07 @ VGS= -4.5 V RDS(ON)=0.095 @ VGS= -2.7 V. Proprietary SuperSOTTM-8 package design using copper lead frame for superior thermal and electrical capabilities. High density cell design for extremely low RDS(ON). Exceptional on-resistance and maximum DC current capability.
_______________________________________________________________________________
D2 D2 D1 D1 S2 S1 G1 G2
5 6 7 8
4 3 2 1
SuperSOT -8 Mark: .8321C
TM
Absolute Maximum Ratings
Symbol Parameter
TA= 25C unless otherwise noted
N-Channel
P-Channel
Units
VDSS VGSS ID
Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed
(Note 1)
20 8 3.8 15
(Note 1)
-20 8 -2.7 -10 0.8 -55 to 150
V V A
PD TJ,TSTG
Power Dissipation for Single Operation
W C
Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
RJA RJC
Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1) (Note 1)
156 40
C/W C/W
(c) 1999 Fairchild Semiconductor Corporation
NDH8321C Rev.C1
Electrical Characteristics (T
Symbol Parameter OFF CHARACTERISTICS
A
= 25C unless otherwise noted)
Conditions
Type
Min
Typ
Max
Units
BVDSS IDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 A VGS = 0 V, ID = -250 A VDS = 16 V, VGS = 0 V TJ = 55oC VDS = -16 V, VGS = 0 V TJ = 55oC
N-Ch P-Ch N-Ch
20 -20 1 10
V V A A A A nA nA
Zero Gate Voltage Drain Current
P-Ch
-1 -10
IGSSF IGSSR VGS(th)
Gate - Body Leakage, Forward Gate - Body Leakage, Reverse
VGS = 8 V, VDS = 0 V VGS = -8 V, VDS= 0 V VDS = VGS, ID = 250 A TJ = 125 C VDS = VGS, ID = -250 A TJ = 125oC
o
All All
100 -100
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
N-Ch
0.4 0.3
0.7 0.45 -0.7 -0.5 0.029 0.043 0.036
1 0.8 -1 -0.8 0.035 0.063 0.045 0.07 0.125 0.095
V
P-Ch N-Ch TJ = 125oC
-0.4 -0.3
RDS(ON)
Static Drain-Source On-Resistance
VGS = 4.5 V, ID = 3.8 A VGS = 2.7 V, ID = 3.3 A VGS = -4.5 V, ID = -2.7 A TJ = 125 C VGS = -2.7 V, ID = -2.3A
o
P-Ch
0.061 0.087 0.082
ID(on)
On-State Drain Current
VGS = 4.5 V, VDS = 5 V VGS = 2.7 V, VDS = 5 V VGS = -4.5 V, VDS = -5 V VGS = -2.7 V, VDS = -5 V
N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch
15 5 -10 -3 15 8 700 865 370 415 145 150
A
gFS
Forward Transconductance
VDS = 5 V, ID = 3.8 A VDS = -5 V, ID = -2.7 A
S
DYNAMIC CHARACTERISTICS
Ciss Coss Crss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
N-Channel VDS = 10 V, VGS = 0 V, f = 1.0 MHz P-Channel VDS = -10 V, VGS = 0 V, f = 1.0 MHz
pF pF pF
NDH8321C Rev.C1
Electrical Characteristics (T
Symbol Parameter SWITCHING CHARACTERISTICS (Note 2)
A
= 25C unless otherwise noted)
Conditions
Type
Min
Typ
Max
Units
tD(on) tr tD(off) tf Qg Qgs Qgd
Turn - On Delay Time Turn - On Rise Time Turn - Off Delay Time Turn - Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
N-Channel VDD = 5 V, ID = 1 A, VGEN = 4.5 V, RGEN = 6 P-Channel VDD = -5 V, ID = -1 A, VGEN = -4.5 V, RGEN = 6
N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch
8 11 22 25 48 78 23 55 19.6 16 2.5 2.4 6.5 5.1
15 22 40 50 90 150 40 100 28 23
ns ns ns ns nC nC nC
N-Channel VDS = 10 V, ID = 3.8 A, VGS = 4.5 V P-Channel VDS = -10 V, ID = -2.7 A, VGS = -4.5 V
N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS VSD
Notes:
Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS = 0 V, IS = 0.67 A VGS = 0 V, IS = -0.67 A
N-Ch P-Ch
(Note2) (Note2)
0.67 -0.67 0.65 -0.7 1.2 -1.2
A V
N-Ch P-Ch
1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design.
PD(t) =
TJ -T A R J A(t)
=
TJ -T A R J C CA(t) +R
= I 2 (t) x RDS(ON)@ J T D
Typical RJA for single device operation using the board layout shown below on 4.5"x5" FR-4 PCB in a still air environment: 156oC/W when mounted on a 0.0025 in2 pad of 2oz copper.
Scale 1 : 1 on letter size paper. 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%.
NDH8321C Rev.C1
Typical Electrical Characteristics: N-Channel
20 2
V
I D , DRAIN-SOURCE CURRENT (A)
16
GS
= 4.5V 3 .0
2 .5
DRAIN-SOURCE ON-RESISTANCE
1 .8
2.7
R DS(on) , NORMALIZED
2 .0
12
VGS = 2.0V
1 .6
1 .4
2 .5 2.7 3.0 3 .5 4 .0 4 .5
8
1 .2
1 .5
4
1
0 0 0 .5 V
DS
1 1 .5 2 , DRAIN-SOURCE VOLTAGE (V)
2 .5
3
0 .8 0 4 8 12 I D , DRAIN CURRENT (A) 16 20
Figure 1. N-Channel On-Region Characteristics.
Figure 2. N-Channel On-Resistance Variation with Gate Voltage and Drain Current.
1.8
2
DRAIN-SOURCE ON-RESISTANCE
DRAIN-SOURCE ON-RESISTANCE
1.6
I D = 3.8A V GS = 4.5V
R DS(on) , NORMALIZED
1 .5
V GS = 4.5 V TJ = 125C
R DS(ON) , NORMALIZED
1.4
25C
1
1.2
-55C
0 .5
1
0.8
0.6 -50
0
-25
0 25 50 75 100 T , JUNCTION TEM PERATURE (C) J
125
150
0
4 I
D
8 12 , DRAIN CURRENT (A)
16
20
Figure 3. N-Channel On-Resistance Variation with Temperature.
Figure 4. N-Channel On-Resistance Variation with Drain Current and Temperature.
15
GATE-SOURCE THRESHOLD VOLTAGE
VDS = 5V
12 I , DRAIN CURRENT (A)
T = -55C J
1 .3
25C 125C
1 .2 1 .1 1 0 .9 0 .8 0 .7 0 .6 0 .5 -50
VDS = VGS I D = 250A
9
6
D
3
0 0 0 .5 1 1 .5 2 VGS , GATE TO SOU RCE VOLTAGE (V) 2 .5
V th, NORMALIZED
-25
0 25 50 75 100 T , JUNCTION TEM PERATURE (C)
J
125
150
Figure 5. N-Channel Transfer Characteristics.
Figure 6. N-Channel Gate Threshold Variation with Temperature.
NDH8321C Rev.C1
Typical Electrical Characteristics: N-Channel (continued)
1 .1 5 1 .1 5
DRAIN-SOURCE BREAKDOWN VOLTAGE
DRAIN-SOURCE BREAKDOWN VOLTAGE
ID = 250A
1 .1
ID = 250A
1 .1
BV DSS , NORMALIZED
BV DSS , NORMALIZED
1 .0 5
1 .0 5
1
1
0 .9 5
0 .9 5
0 .9 -5 0
-2 5
0 T
J
25 50 75 100 , JUNCTION TEMPERATURE (C)
125
150
0 .9 -5 0
-2 5
0 T
J
25 50 75 100 , JUNCTION TEMPERATURE (C)
125
150
Figure 7. N-Channel Breakdown Voltage Variation with Temperature.
Figure 8. N-Channel Body Diode Forward Voltage Variation with Current and Temperature.
2500 2000
5
I D = 3.8A
, GATE-SOURCE VOLTAGE (V)
4
VDS = 5V
1500
10V 15V
CAPACITANCE (pF)
1000
Ciss
500
3
Coss
2
300 200
f = 1 MHz V GS = 0V
100 0 .1
V
0 .2 0 .5 1 3 5 V DS , DRAIN TO SOURCE VOLTAGE (V) 10 20 0 0 5 10 15 Q g , GATE CHARGE (nC) 20 25
GS
Crss
1
Figure 9. N-Channel Capacitance Characteristics.
30
Figure 10. N-Channel Gate Charge Characteristics.
, TRANSCONDUCTANCE (SIEMENS)
V DS = 5V
25
TJ = -55C 25C
20
125C
15
10
5
g
0 0 4 I
D
FS
8 12 , DRAIN CURRENT (A)
16
20
Figure 11. N-Channel Transconductance Variation with Drain Current and Temperature.
NDH8321C Rev.C1
Typical Electrical Characteristics: P-Channel (continued)
-15
V GS =-4.5V
I D , DRAIN-SOURCE CURRENT (A)
2 .5
-3 .5 -3 .0 -2 .7 -2 .5
R DS(on), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
2
-12
V GS = -2.0V
-9
-2 .0
-2.5
1 .5
-2.7 -3.0 -3.5 -4.5
-6
1
-3
-1 .5
0
0 .5
0
-1
-2
-3
-4
0
-3 I
D
V DS , DRAIN-SOURCE VOLTAGE (V)
-6 -9 , DRA IN CURRENT (A)
-12
-15
Figure 12. P-Channel On-Region Characteristics.
Figure 13. P-Channel On-Resistance Variation with Gate Voltage and Drain Current.
1 .6
1.8 RDS(on) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE
I D = -2.7A
VGS = -4.5V
1.6 1.4 1.2
R DS(ON) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE
1 .4
V GS = -4.5V
TJ = 125C
1 .2
25C
1 0.8 0.6 0.4
-55C
1
0 .8
0 .6 -50
-25
0 25 50 75 100 T , JUNCTION TEM PERATURE (C)
J
125
150
0
-3
-6 -9 I D , DRAIN CURRENT (A)
-12
-15
Figure 14. P-Channel On-Resistance Variation with Temperature.
Figure 15. P-Channel On-Resistance Variation with Drain Current and Temperature.
-8 GATE-SOURCE THRESHOLD VOLTAGE
1 .2
V DS = -5V
-6
T
J
= -55C 25C 125C
V GS(th) , NORMALIZED 1 .1 1 0 .9 0 .8 0 .7 0 .6 0 .5 -50
VDS = V GS I D = -250A
I D , DRAIN CURRENT (A)
-4
-2
0 -0.5
-1 -1.5 -2 VGS , GATE TO SOURCE VOLTAGE (V)
-2.5
-25
0 25 50 75 100 TJ , JUNCTION TEMPERATURE (C)
125
150
Figure 16. P-Channel Transfer Characteristics.
Figure 17. P-Channel Gate Threshold Variation with Temperature.
NDH8321C Rev.C1
Typical Electrical Characteristics: P-Channel (continued)
1 .1
10
DRAIN-SOURCE BREAKDOWN VOLTAGE
I D = -250A
-I , REVERSE DRAIN CURRENT (A)
1 .0 8 1 .0 6 1 .0 4 1 .0 2 1 0 .9 8 0 .9 6 0 .9 4 -50
3 1 0 .5
VGS = 0V
T J = 125C
BV DSS , NORMALIZED
25C
0 .1
-55C
0 .01
0 .001
-25
0 25 50 75 100 TJ , JUNCTION TEMPERATURE (C)
125
150
S
0 .0001 0 0 .2 0 .4 0 .6 0 .8 1 -VSD , BODY DIODE FORW A RD VOLTAGE (V) 1 .2
Figure 18. P-Channel Breakdown Voltage Variation with Temperature.
Figure 19. P-Channel Body Diode Forward Voltage Variation with Current and Temperature.
2500
5
I
1500
-V GS , GATE-SOURCE VOLTAGE (V)
D
= -2.7A
V DS = -5V -1 0 V -1 5 V
4
CAPACITANCE (pF)
1000
Ciss
3
500
Coss
2
300 200
f = 1 MHz V GS = 0 V
Crss
1
100 0 .1
0 0 .2 0 .5 1 2 5 -VDS , DRAIN TO SOURCE VOLTAGE (V) 10 20 0 5 10 Q g , GATE CHARGE (nC) 15 20
Figure 20. P-Channel Capacitance Characteristics.
Figure 21. P-Channel Gate Charge Characteristics.
20
g FS, TRANSCONDUCTANCE (SIEMENS)
V DS = -4.5V
16
T J = -55C
25C
12
125C
8
4
0
0
-4
-8 -12 I D , DRAIN CURRENT (A)
-16
-20
Figure 22. P-Channel Transconductance Variation with Drain Current and Temperature.
NDH8321C Rev.C1
Typical Thermal Characteristics: N & P-Channel
30 10
R N) LIM IT
(O DS
10 0 1 m us s
-I D , DRAIN CURRENT (A)
15 10 5 2 1 0.5
RD S N (O IM )L IT
1m 10 ms
s
I D , DRAIN CURRENT (A)
10 10
3 1 0 .3 0 .1 0 .03 0 .01 0 .1
ms s
10
0m
0m
s
1s
VGS = 4.5V SINGLE PULSE RJ A = See Note 1c T A = 25C
1s 10 s
10 s DC
0.1 0.0 5
V
GS
= -4.5V
DC
SINGLE PULSE RJA = See Note 1
A
TA = 25C
0 .5 1 2 5 10 - V DS , DRAIN-SOURCE VOLTAGE (V) 20 30
0 .2
0 .5 1 2 5 10 V DS , DRAIN-SOURCE VOLTAGE (V)
30
0.0 1 0.1
0 .2
Figure 23. N-Channel Maximum Safe Operating Area.
Figure 24. P-Channel Maximum Safe Operating Area.
1
TRANSIENT THERMAL RESISTANCE r(t), NORMALIZED EFFECTIVE
D = 0.5
R
0 .1
0 .2 0 .1 0 .05 0 .02 0 .0 1 Single Pulse
JA (t) = r(t) * R JA R JA = See Note 1
P(pk)
0 .0 1
t1
t2
TJ - TA = P * R
(t) JA Duty Cycle, D = t 1 / t 2
100 300
0 .0 0 1 0 .0 0 0 1
0 .0 0 1
0 .0 1
0.1 t 1 , TIM E (sec)
1
10
Figure 25. Transient Thermal Response Curve.
Note: Thermal characterization performed using the conditions described in note1 . Transient thermal response will change depending on the circuit board design.
VDD V IN
D
t on t d(on) tr
90%
t off t d(off)
90%
tf
RL V OUT
DUT
VOUT
VGS
10%
10% 90%
R GEN
G
V IN
S
10%
50%
50%
PULSE W IDTH
Figure 26. N or P-Channel Switching Test Circuit.
Figure 27. N or P-Channel Switching Waveforms.
NDH8321C Rev.C1
SuperSOTTM-8 Tape and Reel Data and Package Dimensions
SSOT-8 Packaging Configuration: Figure 1.0
Customized Label
Packaging Description:
SSOT-8 parts are shipped in tape. The carrier tape is made from a di ssipat ive (carbo n filled) po ly carbon ate resin. The cover tape is a multilayer film (Heat Activated Adhesive in nature) primarily composed of polyester film , adhesive layer, sealant, and anti-static sprayed agent. These reeled parts in standard option are shipped w ith 3,000 units per 13" or 330cm diameter reel. The reels are dark blue in color and is made of polystyrene plastic (antistatic coated). Other option comes in 500 unit s per 7" or 177cm diameter reel. This and some other options are further described in the Packagin g Information table. These full reels are in di vidu ally barcod e labeled and placed inside a standard intermediate box (ill ustrated in figure 1.0) made of recyclable corrugated brow n paper. One box contains two reels maximum. And t hese boxes are placed ins ide a barcode labeled shipp ing bo x whic h comes in di fferent sizes depend in g on t he nu mber of parts shippe d.
F63TNR Label Anti static Cover Tape
Static Dissi pat ive Emboss ed Carrier Tape
F852 831N F852 831N F852 831N F852 831N F852 831N
Pin 1
SSOT-8 Packaging Information Packaging Option Packaging type Qty per Reel/Tube/Bag Reel Size Box Dimension (mm) Max qty per Box Weight per unit (gm) Weight per Reel (kg) Note/Comments Standard
(no f l ow c ode )
D84Z TNR 500 7" Dia 184x187x47 1,000 0.0416 0.0980
TNR 3,000 13" D ia 343x64x343 6,000 0.0416 0.5615
SSOT-8 Unit Orientation
343mm x 342mm x 64mm Intermediate box for Standar d and L99Z Opti ons
F63TNR Label
F63TNR Label
F63TNR Labe l sa mpl e 184mm x 187mm x 47mm Pizza Box fo r D84Z Option F63TNR Label
LOT: CBVK741B019 FSID: FDR835N QTY: 3000 SPEC:
SSOT-8 Tape Leader and Trailer Configuration: Figur e 2.0
D/C1: D9842 D/C2:
QTY1: QTY2:
SPEC REV: CPN: N/F: F
(F63TNR)3
Carrier Tape Cover Tape
Components Traile r Tape 300mm mi nimum or 38 empty pockets Lead er Tape 500mm mi nimum or 62 empty poc kets
August 1999, Rev. C
SuperSOTTM-8 Tape and Reel Data and Package Dimensions, continued
SSOT-8 Embossed Carrier Tape Configuration: Figur e 3.0
T E1 P0
D0
F K0 Wc B0 E2 W
Tc A0 P1 D1
User Direction of Feed
Dimensions are in millimeter Pkg type SSOT-8 (12mm)
A0
4.47 +/-0.10
B0
5.00 +/-0.10
W
12.0 +/-0.3
D0
1.55 +/-0.05
D1
1.50 +/-0.10
E1
1.75 +/-0.10
E2
10.25 mi n
F
5.50 +/-0.05
P1
8.0 +/-0.1
P0
4.0 +/-0.1
K0
1.37 +/-0.10
T
0.280 +/-0.150
Wc
9.5 +/-0.025
Tc
0.06 +/-0.02
Notes : A0, B0, and K0 dimensions are deter mined with r espec t to t he EIA/Jedec RS-481 rotationa l and lateral movement requi remen ts (see sketches A, B, and C).
20 deg maximum Typical component cavity center line
0.5mm maximum
B0 20 deg maximum component rotation
0.5mm maximum
Sketch A (Si de or Front Sectional View)
Component Rotation
A0 Sketch B (Top View)
Typical component center line
Sketch C (Top View)
Component lateral movement
SSOT-8 Reel Configuration: Figur e 4.0
Component Rotation
W1 Measured at Hub
Dim A Max
Dim A max
Dim N
See detail AA
7" Diameter Option
B Min Dim C See detail AA W3
Dim D min
13" Diameter Option
W2 max Measured at Hub DETAIL AA
Dimensions are in inches and millimeters
Tape Size
12mm
Reel Option
7" Dia
Dim A
7.00 177.8 13.00 330
Dim B
0.059 1.5 0.059 1.5
Dim C
512 +0.020/-0.008 13 +0.5/-0.2 512 +0.020/-0.008 13 +0.5/-0.2
Dim D
0.795 20.2 0.795 20.2
Dim N
5.906 150 7.00 178
Dim W1
0.488 +0.078/-0.000 12.4 +2/0 0.488 +0.078/-0.000 12.4 +2/0
Dim W2
0.724 18.4 0.724 18.4
Dim W3 (LSL-USL)
0.469 - 0.606 11.9 - 15.4 0.469 - 0.606 11.9 - 15.4
12mm
13" Dia
(c) 1998 Fairchild Semiconductor Corporation
July 1999, Rev. C
SuperSOTTM-8 Tape and Reel Data and Package Dimensions, continued
SuperSOTTM-8 (FS PKG Code 34, 35)
1:1
Scale 1:1 on letter size paper
Di mensions shown below are in: inches [millimeters]
Part Weight per unit (gram): 0.0416
September 1998, Rev. A
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The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
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DISCLAIMER
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LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. D

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